PART |
Description |
Maker |
MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET High Energy Power FET TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] http://
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MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 600 VOLTS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
2SK735 |
FAST SWITCHING N-CHANNEL SILICON POWER MOS FET 快速切换N沟道功率MOS FET
|
NEC, Corp. NEC[NEC]
|
2SJ555 |
0.036 ohm, POWER, FET Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
2SJ449 2SJ449JM |
Pch vertical DMOS FET MP-45F SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
BUK9MNN-65PKK |
Dual TrenchPLUS FET Logic Level FET
|
NXP Semiconductors N.V.
|
D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET 金属门射频硅场效应管 METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
2SK2095N A5800286 |
Transistors > MOS FET > Power MOS FET Small switching (60V, 10A) From old datasheet system
|
ROHM[Rohm]
|